parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 22 i c @ t c = 100c continuous collector current 12 a i cm pulsed collector current ? 44 i lm clamped inductive load current ? 44 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy ? 5.0 mj p d @ t c = 25c maximum power dissipation 66 p d @ t c = 100c maximum power dissipation 26 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) c mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) irg4rc20f fast speed igbt insulated gate bipolar transistor e c g features ? fast: optimized for medium operating frequencies (1-5 khz in hard switching, >20 khz in resonant mode). ? generation 4 igbt design provides tighter parameter distribution and higher efficiency than previous generation igbts. ? industry standard to-252aa package ? combines very low v ce(on) with low switching losses ? generation 4 igbts offer highest efficiency ? optimized for specific application conditions ? high power density and current rating benefits v ces = 600v v ce(on) typ. = 1.82v @v ge = 15v, i c = 12a thermal resistance absolute maximum ratings w 2/22/01 d-pak to-252aa c/w parameter typ. max. units r q jc junction-to-case CCC 1.9 r q ja junction-to-ambient (pcb mount)* CCC 50 wt weight 0.3 (0.01) CCC g (oz) * when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 n-channel pd - 91731a
irg4rc20f 2 www.irf.com parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage ? 18 v v ge = 0v, i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage 0.72 v/c v ge = 0v, i c = 1.0ma 1.82 2.1 i c = 12a v ge = 15v v ce(on) collector-to-emitter saturation voltage 2.42 i c = 22a see fig.2, 5 2.04 i c = 12a , t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage -11 mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 5.2 7.75 s v ce = 100v, i c = 12a 250 v ge = 0v, v ce = 600v 2.0 v ge = 0v, v ce = 10v, t j = 25c 1000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v parameter min. typ. max. units conditions q g total gate charge (turn-on) 27 40 i c = 12a q ge gate - emitter charge (turn-on) 4.8 6.8 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) 11.4 17 v ge = 15v t d(on) turn-on delay time 26 t r rise time 24 t j = 25c t d(off) turn-off delay time 194 290 i c = 12a, v cc = 480v t f fall time 226 340 v ge = 15v, r g = 50 w e on turn-on switching loss 0.19 energy losses include "tail" e off turn-off switching loss 0.92 mj see fig. 9, 10, 14 e ts total switching loss 1.11 1.4 t d(on) turn-on delay time 25 t j = 150c, t r rise time 26 i c = 12a, v cc = 480v t d(off) turn-off delay time 263 v ge = 15v, r g = 50 w t f fall time 443 energy losses include "tail" e ts total switching loss 1.89 mj see fig. 11, 14 l e internal emitter inductance 7.5 nh measured 5mm from package c ies input capacitance 540 v ge = 0v c oes output capacitance 37 pf v cc = 30v see fig. 7 c res reverse transfer capacitance 7.0 ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns ? pulse width 80s; duty factor 0.1%. notes: ? repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) ? v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 50 w , (see fig. 13a) ? repetitive rating; pulse width limited by maximum junction temperature. ? pulse width 5.0s, single shot.
irg4rc20f www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 6 8 10 12 14 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j t = 150 c j 0 10 20 30 0.1 1 10 100 f, frequency (khz) load current (a) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: clamp voltage: 80% of rated power dissipation = 15w 1 10 100 12345 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) v = 15v 20s pulse width ge a t = 25c j t = 150c j
irg4rc20f 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 4.5 c i = a 9 c i = a 18 c 25 50 75 100 125 150 0 5 10 15 20 25 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irg4rc20f www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 10 20 30 40 50 0.66 0.67 0.68 0.70 0.71 0.72 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 9.0a cc ge j c 1 10 100 0 200 400 600 800 1000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res 0 5 10 15 20 25 30 0 5 10 15 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 12a cc c ( w ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = 50ohm v = 15v v = 480v g ge cc i = a 24 c i = a 12 c i = a 6 c 50 w
irg4rc20f 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 480v 4 x i c @ 25c d.u.t. 50v l v * c ? ? * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ow er su p p l y , p ulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = 50v driver* 1000v d.u.t. i c c v ? ? ? l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v 1 10 100 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c 5 10 15 20 25 0.0 1.0 2.0 3.0 4.0 5.0 i , collector current (a) total switching losses (mj) c r = 50ohm t = 150 c v = 480v v = 15v g j cc ge 50 w
irg4rc20f www.irf.com 7 t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) ? ? ? fig. 14b - switching loss waveforms d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) min. 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - d ra in 3 - source 4 - d ra in 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c on for ms to jed e c ou tlin e to-252a a. 4 dimensions shown are before solder dip, sold er d ip m ax. +0.16 (.006). lead assignments 1 - gate 2 - collector 3 - emitter 4 - collector
irg4rc20f 8 www.irf.com d-pak (to-252aa) tape & reel information tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. o u tline co nfo rm s to e ia -481. 16 mm 13 inc h data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 2/01
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